Embibe Experts Solutions for Chapter: Semiconductor Devices, Exercise 6: Exercise (Previous Year Questions)

When a $\mathrm{p}-\mathrm{n}$ junction diode is reverse biased, then 

A light-emitting diode has a voltage drop of $2 \mathrm{V}$ across it and passes a current of $10 \mathrm{\mu A}.$ when it operates with a $6 \mathrm{V}$ battery through a limiting resistor $R,$ the value of $R$ is

A $p-n$ photodiode is fabricated from a semiconductor with a band gap of $2.5 \mathrm{eV}.$ It can detect a signal of wavelength

Which one of the following statement is false?

Which of the following current must be zero in an unbiased $\mathrm{P}-\mathrm{N}$ junction diode?

In a p–n junction diode, change in temperature due to heating

If the half-wave rectifier input signal is $V=220\sin \left(\omega t\right)$ and load resistance is $2 \mathrm{k\Omega }$, then output DC current is:-

Output for the following Boolean circuit is:-