Semiconductors

In good conductors of electricity, the type of bonding that exists is:

The resistance of a semiconductor and of a conductor 

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

In a good conductor of electricity, the type of bonding that exists is:

The number of free electrons in $\mathrm{Si}$ at normal temperature is:

Ga As is an alloy :

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the,

Carbon, silicon and germanium have four valence electrons each. At room temperature, which one of following statements is most appropriate?

Copper and silicon are cooled from $300 \mathrm{K}$ to $60 \mathrm{K},$ the specific resistance

An electric field is applied to a semiconductor. Let the number of charge carriers be $n$ and the average drift speed be $v$. If the temperature is increased

Regarding a semiconductor which one of the following is wrong?

A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be

At absolute zero, Si acts as a/an,

$C$ and $Si$ both have same lattice structure having $4$ bonding electrons in each. However, $C$ is insulator where $Si$ is intrinsic semiconductor. This is because?