Embibe Experts Solutions for Chapter: Semiconductor Devices and Communication Systems, Exercise 1: TS EAMCET - 10 August 2021 Shift 1

In a p-type semiconductor, the concentration of holes is $2\times {10}^{15}{ \mathrm{cm}}^{-3}.$ The intrinsic carrier concentration is $2\times {10}^{10}{ \mathrm{cm}}^{-3}.$ The concentration of electrons will be

The depletion layer thickness of a p - n junction is ${10}^{-6} \mathrm{m}.$ If the potential across it is $0.2 \mathrm{V},$ then the electric field will be

Identify a false statement from the following

In the following figure, identify the diodes which are reverse biased

(A)

(B)

(C)

(D)

The width of the depletion region in, $p-n$ junction diode is $500 \mathrm{nm},$ and an electric field of $6\times {10}^5 \mathrm{V} {\mathrm{m}}^{-1}$ is also found to exist. The height of the potential barrier is

In an amplitude modulation process, the modulation index is $\mu .$ The modulation index is changed to ${\mu }_1$ if the amplitude of modulation signal is increased by $1\%.$ The modulation index is changed to ${\mu }_2$ if the amplitude of carrier signal is increased by $1\%.$ Which of the following is true statement?

In frequency modulated wave.

Which of the following frequencies will be suitable for beyond the horizon communication using sky waves?