Embibe Experts Solutions for Chapter: Semiconductor Devices, Exercise 1: KCET (UG) 2019

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Embibe Experts Physics Solutions for Exercise - Embibe Experts Solutions for Chapter: Semiconductor Devices, Exercise 1: KCET (UG) 2019

Attempt the practice questions on Chapter 33: Semiconductor Devices, Exercise 1: KCET (UG) 2019 with hints and solutions to strengthen your understanding. EMBIBE CHAPTER WISE PREVIOUS YEAR PAPERS FOR PHYSICS solutions are prepared by Experienced Embibe Experts.

Questions from Embibe Experts Solutions for Chapter: Semiconductor Devices, Exercise 1: KCET (UG) 2019 with Hints & Solutions

MEDIUM
KCET (UG)
IMPORTANT

The density of an electron-hole pair in pure germanium is 3×1016 m-3 at room temperature. On doping with aluminium, the hole density increases to 4.5×1022 m-3. Now the electron density (in m-3 ) in doped germanium will be

MEDIUM
KCET (UG)
IMPORTANT

Three photodiodes D1,D2 and D3 are made of semiconductors having band gaps of 2.5eV, 2eV and 3eV respectively. Which one will be able to detect light of wavelength λ=6000 Å?

HARD
KCET (UG)
IMPORTANT

The dc common-emitter current gain of a N-P-N transistor is 50 . The potential difference applied across the collector and emitter of a transistor used in CE configuration is, VCE=2V. If the collector resistance, RC=4 KΩ, the base current IB and the collector current IC will be:

EASY
KCET (UG)
IMPORTANT

In a CE amplifier, the input ac signal to be amplified is applied across

MEDIUM
KCET (UG)
IMPORTANT

The circuit given represents which of the logic operations?

Question Image

EASY
KCET (UG)
IMPORTANT

If A=1 and B=0, then in terms of Boolean algebra, A+B=