Embibe Experts Solutions for Chapter: Semiconductor Electronics: Materials, Devices and Simple Circuits, Exercise 1: Exercise

Discuss the two types of doping of silicon when small amounts of indium and arsenic are added. Name the type of semiconductors produced in each case.

Name two donor impurities and two acceptor impurities.

Why cannot we use $\mathrm{Si}$ and $\mathrm{Ge}$ in fabrication of visible LEDs ?

Three photo diodes $D1, D2$ and $D3$ are made of semiconductors having band gaps of $2.5\mathrm{eV}, 2\mathrm{eV}$ and $3\mathrm{eV}$, respectively. Which ones will be able to detect light of wavelength $600 nm$ ?

Given Planck constant is $h=6.62\times {10}^{-34} m^2 kg s^{-1}$,speed of light $c=3\times {10}^{8 }m{s}^{-1}$

The input voltage to a full-wave rectifier is $220 \sin \left(100\mathrm{\pi t}\right) \mathrm{V}$. If the load resistance is $1100 \mathrm{\Omega }$ and forward resistance is negligible. Find the DC load current.

What is the order of energy of forbidden band in a germanium?

What is the order of energy of forbidden band in an aluminium?

Does vacuum diode obey ohm's law? Which law is applicable under space charge limited condition.