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A doped semiconductor has impurity level below the conduction band material is either or
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Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits
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In the circuit shown in Figure, if the diode forward voltage drop is , the voltage difference between and is
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In reverse bias pn-junction diode depletion layer width
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Which of the following statements is not correct when a junction diode is in forward bias?
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The resistance of a device dropped drastically when the polarity of the connection changed. The device could be a
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The circuit shown below contains two ideal diodes, each with a forward resistance of If the battery voltage is the current through the resistance (in amperes) is:
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In a reverse biased diode when the applied voltage changes by 1 V, the current is found to change by 0.5 A. The reverse bias resistance of the diode is
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In a P-N junction diode, the current in the reverse-biased state is due to
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Avalanche breakdown of p-n junction diode is due to
