A photodiode converts electrical energy into light energy.

Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R

Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity.

Reason R: For a $p-n$ junction diode, at applied voltage $V$ the current in the forward bias is more than the current in the reverse bias for $\left|V_z\right|>\pm V\ge \left|V_0\right|$ where $V_0$ is the threshold voltage and $V_z$ is the breakdown voltage.

In the light of the above statements, choose the correct answer from the options given below

What is the advantage of an LED bulb over filament bulb?

Three photo diodes $D1, D2$ and $D3$ are made of semiconductors having band gaps of $2.5\mathrm{eV}, 2\mathrm{eV}$ and $3\mathrm{eV}$, respectively. Which ones will be able to detect light of wavelength $600 nm$ ?

Given Planck constant is $h=6.62\times {10}^{-34} m^2 kg s^{-1}$,speed of light $c=3\times {10}^{8 }m{s}^{-1}$

Match the following List-I with List-II

The correct answer is:

With reference to semiconductor devices, define a $p$-type semiconductor and a Zener diode. What is the use of Zener diode?

In a semiconductor diode, what is meant by a potential barrier?

The forward characteristic curve of a junction diode is shown in the figure :

Calculate the resistance of the diode at

(i) $V=0·5 V$

(ii) $I=60 mA$

Two $p$ - $n$ photodiodes are fabricated from semiconductors with band gap of $2.8\mathrm{eV}$ and $2.6\mathrm{eV},$ respectively.

Choose the correct statement from the following.