A silicon diode requires minimum current of $2 \mathrm{mA}$ to be above its knee point of its $\left(V-I\right)$ characteristics. Assuming voltage across diode is constant above its knee point. The value of maximum resistance that should be connected in series with diode and battery of $10 \mathrm{V}$ such that diode operates above its knee point. (Assume resistance of diode to be zero)

Identify the semiconductor devices whose characteristics are given below, in the order $\left(\mathrm{a}\right),\mathrm{ }\left(\mathrm{b}\right),\mathrm{ }\left(\mathrm{c}\right),\mathrm{ }\left(\mathrm{d}\right)$:

In the following circuit diagram, the current through the battery is

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance $R_1$ will be

If the Ge diode in the circuit is reverse biased, the current through $2\mathrm{k\Omega }$ resistor

$Ge$ and $Si$ diodes start conducting at $0.3 V$ and $0.7 V$ respectively. In the following figure if $Ge$ diode connection are reversed, the value of $V_0$ changes by: (assume that the Ge diode has large breakdown voltage)

In the following circuit, the equivalent resistance between $A$ and $B$ is

The $V-I$ characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is: