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Assertion: An N- type semiconductor has a large number of electrons but still it is electrically neutral.

Reason: An N-type semiconductor is obtained by doping an intrinsic semiconductor with a pentavalent impurity.

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Important Questions on Semiconductor Devices

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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
Which of the following does not give p-type properties to a semiconductor when used as a doping agent?
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
The electron concentration in an undefined n-type semiconductor is the same as hole concentration in a undefined p-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
In n-type silicon, which of the following statements is true?
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
The dominant contribution to current comes from holes in case of
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
The density of an electron-hole pair in pure germanium is 3×1016 m-3 at room temperature. On doping with aluminium, the hole density increases to 4.5×1022 m-3. Now the electron density (in m-3 ) in doped germanium will be
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
If the temperature of the semi-conductor is increased, which of the following is correct statement?
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors

Statement I: By doping silicon semiconductors with pentavalent material, the electrons density increases.

Statement II: The n-type of semiconductor has a net negative charge.

In the above statements, choose the most appropriate answer from the options given below:

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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
When indium is doped to silicon as impurity, the resulting material is
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
For extrinsic semiconductors; when doping level is increased;
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
In a semiconductor, the concentration of minority carriers depends mainly on
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
The majority charge carriers in P-type semiconductors are 
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
An intrinsic semiconductor is converted into n-type extrinsic semiconductor by doping it with:-
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors

In an N-type semiconductor, there are:

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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an N-type semiconductor, the density of electrons is 1019 m-3 and their mobility is 1.6 m2 V-1 s-1, then the resistivity of the semiconductor (since it is an N-type semiconductor contribution of holes is ignored) is close to:
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
In n-type semiconductor, the majority charge carriers are
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
In n-type semiconductor, Silicon is doped with
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors

In an n-type silicon, which of the following statement is true?

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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
An extrinsic semiconductor with electrons as majority carriers can be obtained by doping Ge or Si with
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
A donor impurity results in
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Physics>Modern Physics>Semiconductor Devices>Extrinsic Semiconductors
For a p-type semiconductor, which of the following statements is true?