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Earn 100
Assertion: In n-type semiconductor electrons in conduction band is more than holes in valance band.
Reason: Only electrons are produced when pentavalent impurity is added to pure semiconductor.
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Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits
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Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an -type semiconductor, the density of electrons is and their mobility is , then the resistivity of the semiconductor (since it is an -type semiconductor contribution of holes is ignored) is close to:
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The electron concentration in an undefined -type semiconductor is the same as hole concentration in a undefined -type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.
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Which of the following does not give type properties to a semiconductor when used as a doping agent?
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In a p-type semiconductor, the concentration of holes is The intrinsic carrier concentration is The concentration of electrons will be
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The density of an electron-hole pair in pure germanium is at room temperature. On doping with aluminium, the hole density increases to . Now the electron density (in ) in doped germanium will be
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Which of the following statement is false?
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Statement I: By doping silicon semiconductors with pentavalent material, the electrons density increases.
Statement II: The type of semiconductor has a net negative charge.
In the above statements, choose the most appropriate answer from the options given below:
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Which of the following statements is incorrect?
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For extrinsic semiconductors; when doping level is increased;
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An extrinsic semiconductor with electrons as majority carriers can be obtained by doping Ge or Si with
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When an intrinsic semiconductor such as is doped with a small amount of a trivalent impurity like boron
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An intrinsic semiconductor is converted into -type extrinsic semiconductor by doping it with:-
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At a certain temperature, the number density of charge carriers in a semiconductor is . When an electric field is applied to it, the charge carriers drift with an average speed . If the temperature of the semiconductor is raised.
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In type silicon, which of the following statements is true?
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An intrinsic semiconductor is:
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The intrinsic carrier concentration of silicon sample at is What is the density of minority carrier? (after doping, the number of majority carriers is
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In a semiconductor crystal, if the current flows due to breakage of crystal bonds, then the semiconductor is called:
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In a semiconductor, the concentration of minority carriers depends mainly on
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A donor impurity results in
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For a type semiconductor, which of the following statements is true?
