At absolute zero temperature, intrinsic Germanium and intrinsic Silicon are

Important Questions on SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

EASY

12th Gujarat Board

IMPORTANT

Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 23

In an n-type silicon, which of the following statement is true?

MEDIUM

12th Gujarat Board

IMPORTANT

Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 24

At room temperature in intrinsic Silicon the number of charge carriers per unit volume is $1.6\times {10}^{16}/{\mathrm{m}}^3$. If mobility of electrons is $0.150 {\mathrm{m}}^3 \mathrm{V} {\mathrm{s}}^{-1}$ and mobility of holes is $0.05 {\mathrm{m}}^2 {\mathrm{V}}^{-1} {\mathrm{s}}^{-1}$. Then conductivity of silicon is $\left(\mathrm{\Omega } \mathrm{m}\right)$ is

HARD

12th Gujarat Board

IMPORTANT

Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 25

The electron density of intrinsic semiconductor at room temperature is ${10}^{16} {\mathrm{m}}^{-3}$. When doped with a trivalent impurity, the electron density is decreased to ${10}^{14} {\mathrm{m}}^{-3}$ at the same temperature. The majority carrier density is

EASY

12th Gujarat Board

IMPORTANT

Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 33

Current through the ideal diode is 

EASY

12th Gujarat Board

IMPORTANT

Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 34

When a forward bias is applied to a p-n junction, it

EASY

12th Gujarat Board

IMPORTANT

Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 35

In an unbiased p-n junction, holes diffuse from the p-region to n-region because

MEDIUM

12th Gujarat Board

IMPORTANT

Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 36

For a PN junction the average value of the potential barrier is $0.1 \mathrm{V}$ and the electric field ${10}^5 \mathrm{V}/\mathrm{m}$ is present at junction region. What will be the width of depletion layer for this junction?

MEDIUM

12th Gujarat Board

IMPORTANT

Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 37

The output of the given circuit in the figure given below: