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12th Gujarat Board
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At absolute zero temperature, intrinsic Germanium and intrinsic Silicon are

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Important Questions on SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

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12th Gujarat Board
IMPORTANT
In an n-type silicon, which of the following statement is true?
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12th Gujarat Board
IMPORTANT
At room temperature in intrinsic Silicon the number of charge carriers per unit volume is 1.6×1016/m3. If mobility of electrons is 0.150 m3 V s-1 and mobility of holes is 0.05 m2 V-1 s-1. Then conductivity of silicon is Ω m is
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12th Gujarat Board
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The electron density of intrinsic semiconductor at room temperature is 1016 m-3. When doped with a trivalent impurity, the electron density is decreased to 1014 m-3 at the same temperature. The majority carrier density is
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12th Gujarat Board
IMPORTANT
In an unbiased p-n junction, holes diffuse from the p-region to n-region because
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12th Gujarat Board
IMPORTANT
For a PN junction the average value of the potential barrier is 0.1 V and the electric field 105 V/m is present at junction region. What will be the width of depletion layer for this junction?
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12th Gujarat Board
IMPORTANT
The output of the given circuit in the figure given below:
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