EASY

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Carbon, Silicon and Germanium atoms have four valence electrons each. Their valence and conduction bonds are separated by energy band gaps represented by ${(E_{g})}_{c}, {(E_{g})}_{st}$ and ${(E_{g})}_{Ge}$ , respectively. Which one of the following relationships is true on their case?

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Important Questions on Semiconductor Devices

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

If the forbidden energy gap in a substance is

1 eV

, substance is a

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

The bonding is germanium crystal (semiconductor) is

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

The chromium ions doped in the ruby rod:

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

The band gaps of an insulator, semiconductor and conductor are respectively $E_{g_{1},} E_{g_{2}} and E_{g_{3}}$ .The relationship between them can be given as:

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

Which of the energy band diagrams shown in the figure corresponds to that of a semiconductor?

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

Choose the correct option :
Electrical conductivity of a semiconductor-

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

The energy gap is much more in silicon than in germanium because

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

The Forbidden gap between conduction band & valance band is maximum for ______

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

The band gaps of an insulator, conductor and semiconductor are respectively

E_{g 1}, E_{g 2}

and

E_{g 3} .

The relationship between them is given as _____.

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

Consider a situation in which reverse biased current of a particular

P - N

junction increases when it is exposed to a light of wavelength

\leq 621 nm .

During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

Arrange the following in order of increasing band gap

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

Choose the correct statement. In conductors

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

A semiconductor with equal concentration of acceptor and donor type impurities is termed as

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

Glass is a

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

When will the conductivity of a Ge semiconductor decrease?

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

The forbidden energy gap for

Ge

crystal at

0 K

MEDIUM

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

As the temperature increases, the electrical resistance

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

The scientific principle involved in 'Laser' is____

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

The band gap in

Ge

and

Si

eV

respectively is

EASY

Physics>Modern Physics>Semiconductor Devices>Energy Bands in Solids

A positive hole in a semiconductor is

Carbon, Silicon and Germanium atoms have four valence electrons each. Their valence and conduction bonds are separated by energy band gaps represented by Egc, Egst and EgGe, respectively. Which one of the following relationships is true on their case?

Important Questions on Semiconductor Devices

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Carbon, Silicon and Germanium atoms have four valence electrons each. Their valence and conduction bonds are separated by energy band gaps represented by ${(E_{g})}_{c}, {(E_{g})}_{st}$ and ${(E_{g})}_{Ge}$ , respectively. Which one of the following relationships is true on their case?