If the input frequency is $50 \mathrm{Hz}$. What is the output frequency of a full-wave rectifier?

Important Questions on SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

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IMPORTANT

Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 3

In the circuit shown assume the diode to be ideal. When $V$ increases from $2 \mathrm{V}$ to $6 \mathrm{V}$, the change in the current accross the resistor is (in $\mathrm{mA}$)

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Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 4

The circuits that make rippled AC to pure DC are known as

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Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 5

In a n-type silicon, which of the following statement is true:

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Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 7

When a battery is connected to a $p$-type semiconductor with a metallic wire, the current in the semiconductor (predominantly), inside the metallic wire and that inside the battery respectively due to

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Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 8

In a semiconductor at room temperature-

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Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 9

The density of electron-hole pair in a pure germanium is $3\times {10}^{16} {\mathrm{ m}}^{-3}$ at room temperature. On doping with aluminium, the hole density increases to $4.5\times {10}^{\mathrm{22 }}{\mathrm{ m}}^{-3}.$ Now, the electron density $\left(\mathrm{i}\mathrm{n} {\mathrm{ m}}^{-3}\right)$ in doped germanium will be

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IMPORTANT

Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 10

Which of the statements is true for p-type semiconductors?

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IMPORTANT

Physics Crash Course (Based on Revised Syllabus - 2023)>Chapter 14 - SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS>Exercise>Q 11

In an intrinsic semiconductor the energy gap $E_g$ is $1.2 \mathrm{eV}$. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at $600 \mathrm{K}$ and that at $300 \mathrm{K}$? Assume that the temperature dependence of intrinsic carrier concentration $n_i$ is given by $n_i=n_0\exp \left(-\frac{E_g}{2k_{B}T}\right)$ where $n_0$ is a constant.