Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 57

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In a diode, the diffusion current is $i_{d i f f u s i o n}$ and drift current is $i_{d r i f t}$ , then match the column.

Column-I Column-II

(1) Diode with no biasing
(2) Diode in forward bias
(3) Diode in reverse bias without breakdown
(4) Diode in reverse bias with breakdown
(p) $i_{d i f f u s i o n} ≫ i_{d r i f t}$

(q) $i_{d r i f t} ≫ i_{d i f f u s i o n}$

(r) $i {}_{d r i f t}> i_{d i f f u s i o n}$

(s) $i {}_{d r i f t}= i_{d i f f u s i o n}$

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Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 58

The barrier potential of a silicon diode is approximately:

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 59

In an unbiased p-n junction, holes diffuse from the p-region to n- region because

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 60

When a semiconducting device is connected in series with a battery and a resistance, a current is found to flow in the circuit. If, however, the polarity of the battery is reversed, practically no current flows in the circuit. The device may be

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 61

An ideal crystal diode behaves in forward bias as a perfect-

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 62

Reverse bias applied to a

p - n

junction diode

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 63

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon

p - n

junctions are

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 64

The depletion layer of a

p - n

junction

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 65

In the middle of the depletion layer of reverse biased $p - n$ junction, the