A donor impurity results in

production of n -type semiconductor.

conduction band just above the filled valence band.

holes as majority carriers and electrons as minority carriers.

production of p -type semiconductor.

Photodiode is a device

which is always operated in reverse bias

which is always operated in forward bias

in which photo current is independent of intensity of incident radiation

which may be operated in forward or reverse bias.

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In an unbiased p-n junction, holes diffuse from the p-region to n- region because

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Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 55

For a PN junction the average value of the potential barrier is

0.1 V

and the electric field

10^{5} V / m

is present at junction region. What will be the width of depletion layer for this junction?

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 56

The output of the given circuit in the figure given below:
Question Image

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 57

In a diode, the diffusion current is $i_{d i f f u s i o n}$ and drift current is $i_{d r i f t}$ , then match the column.

Column-I

Column-II

(1) Diode with no biasing
(2) Diode in forward bias
(3) Diode in reverse bias without breakdown
(4) Diode in reverse bias with breakdown

(p) $i_{d i f f u s i o n} ≫ i_{d r i f t}$

(q) $i_{d r i f t} ≫ i_{d i f f u s i o n}$

(r) $i {}_{d r i f t}> i_{d i f f u s i o n}$

(s) $i {}_{d r i f t}= i_{d i f f u s i o n}$

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 58

The barrier potential of a silicon diode is approximately:

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 59

In an unbiased p-n junction, holes diffuse from the p-region to n- region because

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IMPORTANT

Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 60

When a semiconducting device is connected in series with a battery and a resistance, a current is found to flow in the circuit. If, however, the polarity of the battery is reversed, practically no current flows in the circuit. The device may be

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 61

An ideal crystal diode behaves in forward bias as a perfect-

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 62

Reverse bias applied to a

p - n

junction diode

In an unbiased p-n junction, holes diffuse from the p-region to n- region because

Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits

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