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In forward bias, the width of potential barrier in a p-n junction diode

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Important Questions on Solids and Semiconductor Devices

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JEE Advanced
IMPORTANT
The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n junctions are,
EASY
JEE Advanced
IMPORTANT
In p-n junction, avalanche current flows in circuit when biasing is,
EASY
JEE Advanced
IMPORTANT
When forward bias is applied to a p-n junction, what happens to the potential barrier VB and the width of charge depleted region x?
MEDIUM
JEE Advanced
IMPORTANT
A potential barrier of 0.50 V exists across a p-n junction. If the depletion region is 5.0×10-7 m wide, the intensity of the electric field in this region is,
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JEE Advanced
IMPORTANT

For the given circuit of p-n junction diode, which of the following statement is correct?

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JEE Advanced
IMPORTANT

The diode shown in the circuit is a silicon diode. The potential difference between the points A and B will be,

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JEE Advanced
IMPORTANT

A diode having potential difference 0.5 V across its junction, which does not depend on current, is connected in series with resistance of 20 Ω across source. If 0.1 A passes through resistance, then what is the voltage of the source?