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In $n$ -type semiconductor, Silicon is doped with

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Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

The dominant contribution to current comes from holes in case of

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

The electron concentration in an undefined

n

-type semiconductor is the same as hole concentration in a undefined

p

-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

If the temperature of the semi-conductor is increased, which of the following is correct statement?

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

The majority charge carriers in P-type semiconductors are

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

The density of an electron-hole pair in pure germanium is

3 \times 10^{16} m^{- 3}

at room temperature. On doping with aluminium, the hole density increases to

4.5 \times 10^{22} m^{- 3}

. Now the electron density (in

m^{- 3}

) in doped germanium will be

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

n -

type silicon, which of the following statements is true?

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

Statement I: By doping silicon semiconductors with pentavalent material, the electrons density increases.

Statement II: The $n -$ type of semiconductor has a net negative charge.

In the above statements, choose the most appropriate answer from the options given below:

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

In an n-type silicon, which of the following statement is true?

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

For extrinsic semiconductors; when doping level is increased;

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

In a semiconductor, the concentration of minority carriers depends mainly on

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

In an N-type semiconductor, there are:

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

An intrinsic semiconductor is converted into

n

-type extrinsic semiconductor by doping it with:-

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

In n-type semiconductor, the majority charge carriers are

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

Which of the following does not give

p -

type properties to a semiconductor when used as a doping agent?

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

When indium is doped to silicon as impurity, the resulting material is

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

Intrinsic carrier concentration of a silicon sample at

300 K

1.5 \times 10^{16} m^{- 3} .

After doping, the number of majority carriers is

2.25 \times 10^{20} m^{- 3} .

The minority carrier density is

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

The base region of a silicon n-p-n transistor is obtained by doping

Si

with either

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

An extrinsic semiconductor with electrons as majority carriers can be obtained by doping Ge or Si with

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

A donor impurity results in

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Physics>Modern Physics>Semiconductor Electronics: Materials, Devices and Simple Circuits>Extrinsic Semiconductor

For a

p -

type semiconductor, which of the following statements is true?

In n-type semiconductor, Silicon is doped with

Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits

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In $n$ -type semiconductor, Silicon is doped with