EASY
JEE Advanced
IMPORTANT
Earn 100

In the forward bias arrangement of a p-n junction diode, the,

83.33% studentsanswered this correctly

Important Questions on Solids and Semiconductor Devices

EASY
JEE Advanced
IMPORTANT
Complete Study Pack for Engineering Entrances Objective Physics Vol 2>Chapter 10 - Solids and Semiconductor Devices>Objective Problems [Level 1]>Q 35
The potential barrier for silicon diode is approximately,
EASY
JEE Advanced
IMPORTANT
Complete Study Pack for Engineering Entrances Objective Physics Vol 2>Chapter 10 - Solids and Semiconductor Devices>Objective Problems [Level 1]>Q 36
The reverse biasing in a p-n junction diode,
EASY
JEE Advanced
IMPORTANT
Complete Study Pack for Engineering Entrances Objective Physics Vol 2>Chapter 10 - Solids and Semiconductor Devices>Objective Problems [Level 1]>Q 37

In the circuit given below, the value of the current is,

Question Image

EASY
JEE Advanced
IMPORTANT
Complete Study Pack for Engineering Entrances Objective Physics Vol 2>Chapter 10 - Solids and Semiconductor Devices>Objective Problems [Level 1]>Q 38
A p-n junction has a thickness of the order of,
EASY
JEE Advanced
IMPORTANT
Complete Study Pack for Engineering Entrances Objective Physics Vol 2>Chapter 10 - Solids and Semiconductor Devices>Objective Problems [Level 1]>Q 39
In forward bias, the width of potential barrier in a p-n junction diode
EASY
JEE Advanced
IMPORTANT
Complete Study Pack for Engineering Entrances Objective Physics Vol 2>Chapter 10 - Solids and Semiconductor Devices>Objective Problems [Level 1]>Q 40
The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n junctions are,
EASY
JEE Advanced
IMPORTANT
Complete Study Pack for Engineering Entrances Objective Physics Vol 2>Chapter 10 - Solids and Semiconductor Devices>Objective Problems [Level 1]>Q 41
In p-n junction, avalanche current flows in circuit when biasing is,
EASY
JEE Advanced
IMPORTANT
Complete Study Pack for Engineering Entrances Objective Physics Vol 2>Chapter 10 - Solids and Semiconductor Devices>Objective Problems [Level 1]>Q 42
When forward bias is applied to a p-n junction, what happens to the potential barrier VB and the width of charge depleted region x?