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The Donor level in a semiconductor is placed _____.

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Important Questions on Semiconductor Electronics

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General Science for Competitive Exams>Chapter 8 - Semiconductor Electronics>EXERCISE>Q 9
If the distance between the conduction band and valence band is 1 eV. This combination is _____.
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General Science for Competitive Exams>Chapter 8 - Semiconductor Electronics>EXERCISE>Q 10
Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (Eg)C, (Eg)Si and (Eg)Ge. Which of the following is true from the given options?
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General Science for Competitive Exams>Chapter 8 - Semiconductor Electronics>EXERCISE>Q 11
In an unbiased p-n junction, holes diffuse from the p-region to n-region because:
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General Science for Competitive Exams>Chapter 8 - Semiconductor Electronics>EXERCISE>Q 12
For a transistor amplifier, the voltage gain _____.
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General Science for Competitive Exams>Chapter 8 - Semiconductor Electronics>EXERCISE>Q 13
p-n junction diode works as a insulator, if connected _____.
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General Science for Competitive Exams>Chapter 8 - Semiconductor Electronics>EXERCISE>Q 15
Which of the statements is true for p-type semiconductors?
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General Science for Competitive Exams>Chapter 8 - Semiconductor Electronics>EXERCISE>Q 16
When a forward bias is applied to a p-n junction, it:
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General Science for Competitive Exams>Chapter 8 - Semiconductor Electronics>EXERCISE>Q 17
The potential barrier in the depletion layer is due to _____.