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The base region of a silicon n-p-n transistor is obtained by doping with either
(a)Boron or Phosphorous
(b)Boron or Aluminium
(c)Aluminium or Arsenic
(d)Arsenic or Phosphorus

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Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits
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The dominant contribution to current comes from holes in case of

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The electron concentration in an undefined -type semiconductor is the same as hole concentration in a undefined -type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.

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If the temperature of the semi-conductor is increased, which of the following is correct statement?

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The majority charge carriers in P-type semiconductors are

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The density of an electron-hole pair in pure germanium is at room temperature. On doping with aluminium, the hole density increases to . Now the electron density (in ) in doped germanium will be

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Which of the following does not give type properties to a semiconductor when used as a doping agent?

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Statement I: By doping silicon semiconductors with pentavalent material, the electrons density increases.
Statement II: The type of semiconductor has a net negative charge.
In the above statements, choose the most appropriate answer from the options given below:

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In an n-type silicon, which of the following statement is true?

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For extrinsic semiconductors; when doping level is increased;

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In a semiconductor, the concentration of minority carriers depends mainly on

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In an N-type semiconductor, there are:

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An intrinsic semiconductor is converted into -type extrinsic semiconductor by doping it with:-

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In n-type semiconductor, the majority charge carriers are

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In type silicon, which of the following statements is true?

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When indium is doped to silicon as impurity, the resulting material is

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Intrinsic carrier concentration of a silicon sample at is After doping, the number of majority carriers is The minority carrier density is

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In -type semiconductor, Silicon is doped with

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An extrinsic semiconductor with electrons as majority carriers can be obtained by doping Ge or Si with

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A donor impurity results in

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For a type semiconductor, which of the following statements is true?

