The conductivity of a semiconductor increases with increase in temperature because

Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 14

In semiconductor, at room temperature:

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 15

Which one of the following is not an elemental semiconductor?

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 16

In an intrinsic semiconductor, the forbidden energy gap between valence band and a conduction band is of the order of _____.

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 17

For which of the following substance, resistance decreases with increase in temperature?

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 18

Which of the following term is not related to compound semiconductors?

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 19

Gallium arsenide is an example of:

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 20

A silicon specimen is made into a $p$-type semiconductor by doping, on an average, one indium atom per ${5\times 10}^7$ silicon atoms. If the number density of atoms in the silicon specimen is ${5\times 10}^{28}$ atoms ${\mathrm{m}}^{-3}$, then the number of acceptor atoms in silicon per cubic centimeter will be

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Achieve CUET (UG) Physics Practice Book>Chapter 14 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Exercise>Q 21

A semiconductor is known to have an electron concentration of $8 \times {10}^{13} {\mathrm{cm}}^{-3 }$and a hole concentration of$5 \times {10}^{12} {\mathrm{cm}}^{-3}$ . The semiconductor is