Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 29

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The depletion region of $p - n$ junction has a thickness of the order of

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Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 30

In a properly biased transistor

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 31

In an

n - p - n

transistor, the collector current is

10 mA

. If

90 %

of the electrons emitted reaches the collector, then the emitter current will be about

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 32

Application of a forward bias to a

p - n

junction

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 33

lntrinsic semiconductor at absolute zero temperature is a

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 35

Four equal resistors, each of resistance $10 Ω$ , are connected as shown in the circuit diagram The equivalent resistance between $A$ and $B$ is

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 36

In a semiconducting material, the mobilities of electrons and holes are

μ_{e}

and

μ_{h}

, respectively. Which of the following is true?

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 37

A full-wave rectifier circuit along with input and output are shown in the figure. The contribution from the diode $D_{2}$ is (are)

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 38

In a

p - n

junction having depletion layer of thickness

10^{- 6} m

, the potential difference across it is

0.1 V

. The electric field is