The diagram shows the formation process of a p-n junction diode Identify the arrow representing

(i) Electron Diffusion

(ii) Electron Drift

Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R

Assertion A: Diffusion current in a $p-n$ junction is greater than the drift current in magnitude if the junction is forward biased.

Reason R: Diffusion current in a $p-n$ junction is form the $n$-side to the $p$-side if the junction is forward biased.

In the light of the above statements, choose the most appropriate answer from the options given below.

In the following circuit diagram, the current through the battery is

In a semiconductor diode, what is meant by a potential barrier?

$Ge$ and $Si$ diodes start conducting at $0.3 V$ and $0.7 V$ respectively. In the following figure if $Ge$ diode connection are reversed, the value of $V_0$ changes by: (assume that the Ge diode has large breakdown voltage)