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The emitter region in a $P N P$ -junction transistor is more heavily doped than the base region, so that

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Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 48

In a

P - N

junction, for a

0.2 V

change in the forward bias voltage, the corresponding change in current is

20 mA

. The dynamic resistance of the

P - N

junction is

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 49

In a common emitter amplifier, when a signal of

40 mV

is added to the input voltage, the base current changes by

100 μA

and emitter current changes by

2.1 mA

. The trans-conductance is

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 50

The output of the given logic gate is

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 51

Two identical capacitors $A$ and $B$ are charged to the same potential $V$ and are connected in two circuits at $t = 0$ as shown in the figure. The charges on the capacitors at a time $t = C R$ are, respectively,

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 52

The relationship between

α

and

β

is given by

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 53

In a silicon transistor, a change of

7.89 mA

in the emitter current produces a change of

7.8 mA

in the collector current.What change in the base is necessary to produce an equivalent change in the collector current?

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 54

In the given figure, a transistor is connected in common emitter configuration. If $V_{B E} = 1 V$ and current gain $β = 100$ , then the voltage across collector-emitter terminals $V_{C E}$ is

[ $V_{B E}$ - voltage across base-emitter junction]

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Gamma Question Bank for Engineering Physics>Chapter 23 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment Set-2>Q 55

A transistor is used in common-emitter mode in an amplifier circuit. When a signal of

20 mV

is added to the base-emitter voltage, the base current changes by

40 µ A

and the collector current changes by

2 mA

. The load resistance is

5 kΩ

. Then the voltage gain is

The emitter region in a PNP-junction transistor is more heavily doped than the base region, so that

Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits

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The emitter region in a $P N P$ -junction transistor is more heavily doped than the base region, so that