The energy gap in germanium is $0.75 \mathrm{e}\mathrm{V}.$ Compare the intrinsic conductivity of germanium at $300 \mathrm{K}$ and $330 \mathrm{K}$. Take $k_B=8.6\times {10}^{-5} \mathrm{e}\mathrm{V}{\mathrm{K}}^{-1}.$

The $\text{V-I}$ characteristic of a silicon diode is as shown in figure. Calculate the resistance of the diode at

(i) $\mathrm{I}=15 \mathrm{m}\mathrm{A}$ and

(ii) $V=-10 \mathrm{V}$

The silicon diode shown in figure is rated for a maximum current of $100 \mathrm{m}\mathrm{A}.$ Calculate the minimum value of resistor $\mathrm{R}$. Assume the forward voltage drop across the diode to be $0.7 \mathrm{V}$.

Figure shows a diode connected to an external resistance and a battery. Assuming that the barrier developed in the diode is $0.5 \mathrm{V},$ obtain the value of current in the circuit in milliampere.

Find the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is $20 \mathrm{\mu A}$.

Find the equivalent resistance of the circuit shown in figure between points $\mathrm{A}$ and $\mathrm{B}$, for

Assuming that the resistances of the meters are negligible, what will be the readings of the ammeters ${\mathrm{A}}_1$ and ${\mathrm{A}}_2$ in the circuit shown in figure?