The $n-$type semiconductors are obtained, when germanium is doped with

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the,

If in a $p-n$ junction diode, a square input signal of $10 \mathrm{V}$ is applied as shown in Fig.21.84, then the output signal across $R_L$ will be

In a semiconductor the concentration of electrons and holes are $8\times {10}^{18} {\mathrm{m}}^{-3}$ and $5\times {10}^{18} {\mathrm{m}}^{-3}$ respectively. If the mobilities of electrons and holes are $2.3{ \mathrm{m}}^2 {\mathrm{V}}^{-1} {\mathrm{s}}^{-1}$ and $0.01{ \mathrm{m}}^2 {\mathrm{V}}^{-1} {\mathrm{s}}^{-1}$ respectively, then semiconductor is