The value of form factor in case of half wave rectifier is

Important Questions on Semiconductor Electronics: Materials, Devices and Simple Circuits

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Gamma Question Bank for Medical Physics>Chapter 24 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment>Q 19

A junction diode, in which one of the $p$ or $n$-sections is made very thin, can be used to convert light energy into electrical energy, then the diode is called 

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Gamma Question Bank for Medical Physics>Chapter 24 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment>Q 20

The material suitable for making a solar cell is

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Gamma Question Bank for Medical Physics>Chapter 24 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment>Q 21

In which of the configuration of a transistor,the power gain is highest?

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Gamma Question Bank for Medical Physics>Chapter 24 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment>Q 22

In a common-base amplifier, the phase difference between the input signal voltage and the output voltage is

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Gamma Question Bank for Medical Physics>Chapter 24 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment>Q 23

The transfer ratio $\beta$ of a transistor is $50$. The input resistance of the transistor, when used in the common-emitter configuration is $1 k\Omega$. The peak value of the collector $\mathrm{AC}$ current for a peak value of AC input voltage of $0.01 \mathrm{V}$ is

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Gamma Question Bank for Medical Physics>Chapter 24 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment>Q 24

In the common emitter transistor circuit, the base current is $40 \mathrm{\mu A}$, then $V_{BE}$ is:-

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Gamma Question Bank for Medical Physics>Chapter 24 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment>Q 25

In a transistor the base is very lightly doped as compared to the emitter because by doing so

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Gamma Question Bank for Medical Physics>Chapter 24 - Semiconductor Electronics: Materials, Devices and Simple Circuits>Assignment>Q 26

A transistor is operated in common emitter configuration at $V_{\mathrm{C}}=2 \mathrm{V}$ such that a change in the base current from $100 \mathrm{\mu A}$ to $300 \mathrm{\mu A}$ produces a change in the collector current from $10 \mathrm{mA}$ to $20 \mathrm{mA}$. The current gain is