Beta Question Bank for Medical: Physics>Chapter 35 - Semiconductor Devices>Exercise (Analytical Questions)>Q 8

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To reduce the ripples in a rectifier circuit with capacitor filter
(a) R_L should be increased.
(b) Input frequency should be decreased.
(c) Input frequency should be increased.
(d) Capacitors with high capacitance should be used.

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Important Questions on Semiconductor Devices

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Beta Question Bank for Medical: Physics>Chapter 35 - Semiconductor Devices>Exercise (Analytical Questions)>Q 9

The energy of radiation emitted by LED is :-

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Beta Question Bank for Medical: Physics>Chapter 35 - Semiconductor Devices>Exercise (Analytical Questions)>Q 11

In the circuit shown the transistor used has current gain $β = 100$ . What should be the base resistor $R_{B}$ , so that $V_{C E} = 5 V$ , $V_{B E} = 0$

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Beta Question Bank for Medical: Physics>Chapter 35 - Semiconductor Devices>Exercise (Analytical Questions)>Q 12

Two similar blocks of intrinsic silicon are separately doped uniformly to obtain the same dopant densities

N_{D} - N_{A} m^{- 3}

. The

n

-type and

p

-type samples thus obtained are arranged in parallel to each other and a current is passed through the combination. Then

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Beta Question Bank for Medical: Physics>Chapter 35 - Semiconductor Devices>Exercise (Analytical Questions)>Q 14

The intrinsic carrier density in germanium crystal at

300 K

is

2.5 \times 10^{13} {cm}^{- 3}

. If electron density in an

n

-type germanium crystal at

300 K

be

0.5 \times 10^{17} {cm}^{- 3}

, a hole density

({cm}^{- 3})

in this

n

-type crystal at

300 K

would be expected around

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Beta Question Bank for Medical: Physics>Chapter 35 - Semiconductor Devices>Exercise (Analytical Questions)>Q 17

In a half-wave rectifier peak value of the sinusoidal signal is

10 V

. Determine DC component at the output:-

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Beta Question Bank for Medical: Physics>Chapter 35 - Semiconductor Devices>Exercise (Analytical Questions)>Q 18

In a forward biased p-n junction diode, the potential barrier in the depletion region is of the form :-

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Beta Question Bank for Medical: Physics>Chapter 35 - Semiconductor Devices>Exercise (Analytical Questions)>Q 19

The number of charge carrier concentration in silicon at

300 K

is

1.56 \times 10^{16} m^{- 3}

. lt the electron and hole mobilities are, respectively,

0.136

and

0.065

(SI units) the resistivity of the material is (in SI units) approximately:-

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Beta Question Bank for Medical: Physics>Chapter 35 - Semiconductor Devices>Exercise (Analytical Questions)>Q 20

Assuming the diodes to be of silicon with forward resistance zero, the current $I$ in the following circuit is:-

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