Two junction diodes one of germanium $\left(\mathrm{Ge}\right)$ and other of silicon $\left(\mathrm{Si}\right)$ are connected as shown in figure to a battery of emf $12 \mathrm{V}$ and a load resistance $10 \mathrm{k\Omega }$. The germanium diode conducts at $0.3 \mathrm{V}$ and silicon diode at $0.7 \mathrm{V}$. When a current flows in the circuit, the potential of terminal $Y$ will be

 

The current flowing through the zener diode in figure is

The adjacent figure shows $I–V$ characteristics of a silicon diode. In this connection three statements are made$–\left(\mathrm{I}\right)$ the region $OC$ corresponds to reverse bias of the diode, $\left(\mathrm{II}\right)$ the voltage at point $A$ is about $0.2 \mathrm{volt}$, and $\left(\mathrm{III}\right)$ different scales have been used along $+\mathrm{ve}$ and $–\mathrm{ve}$ directions of $Y-$axis. Therefore,