Match the List I with List II List I List II A Intrinsic Semiconductor I Fermi-level near valence band B n-type semiconductor II Fermi-level at middle of valence and conduction band C p-type semiconductor III Fermi-level near conduction band D Metals IV Fermi-level inside conduction band Choose the correct answer from the options given below:

(A) → II, (B) → III, (C) → I, (D) → IV

(A) → I, (B) → II, (C) → III, (D) → IV

(A) → II, (B) → I, (C) → III, (D) → IV

(A) → III, (B) → I, (C) → II, (D) → IV

MEDIUM

Earn 100

What is the effect of temperature on intrinsic semiconductor?

Important Questions on Electronic Devices

EASY

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

Write the truth table of two inputs NAND gate.

EASY

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

Using block diagrams, name the segments of general communication system.

MEDIUM

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

In a transistor,

I_{C} = 0.98, I_{B} = 20 μA

. Find

(i)

α

and

(ii) β

Of the transistor.

MEDIUM

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

For a pure Si crystal has

5 \times 10^{28}

atom $\mathrm{m}^{-3}$. It is doped by

1

PPM concentration of pentavalent As. Calculate the number of electron & holes.
(Given that

n_{i} = 1.5 \times 10^{16} m^{- 3}

)

EASY

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

State the conditions required to achieve laser action.

EASY

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

Explain 'Conduction band', 'Valence band' and 'Energy gap' in semiconductors.

EASY

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

Write two points of advantages of FM broadcasting over AM broadcasting.

MEDIUM

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

The contribution to the total current in a semiconductor, due to electrons and holes are

0.75

and

0.25

respectively. The drift velocity of electrons is

\frac{3}{2}

times that of holes at this temperature. Then the ratio between electron concentration and hole concentration is

EASY

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

The chromium ions doped in the ruby rod:

EASY

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

Write the truth table of AND gate.

MEDIUM

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

Match the List I with List II

	List I		List II
A	Intrinsic Semiconductor	I	Fermi-level near valence band
B	n-type semiconductor	II	Fermi-level at middle of valence and conduction band
C	p-type semiconductor	III	Fermi-level near conduction band
D	Metals	IV	Fermi-level inside conduction band

Choose the correct answer from the options given below:

EASY

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

Consider a situation in which reverse biased current of a particular

P - N

junction increases when it is exposed to a light of wavelength

\leq 621 nm .

During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.

MEDIUM

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

The conductivity of a semiconductor sample having electron concentration of

5 \times 10^{18} electrons m^{- 3}

, hole concentration of

5 \times 10^{19} holes m^{- 3}

, electron mobility of

2 .0 m^{2} V^{- 1} s^{- 1}

and hole mobility of

0.01 m^{2} V^{- 1} s^{- 1}

is

(Take charge of an electron as

1 .6 \times 10^{- 19} C

)

EASY

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

Define small signal current gain of a transistor in common emitter configuration.

EASY

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

For a

p -

type semiconductor, which of the following statements is true?

EASY

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

At a certain temperature, the number density of charge carriers in a semiconductor is

n

. When an electric field is applied to it, the charge carriers drift with an average speed

v

. If the temperature of the semiconductor is raised.

EASY

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

An intrinsic semiconductor is converted into

n

-type extrinsic semiconductor by doping it with:-

MEDIUM

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

Explain with the help of a labelled circuit diagram, how an

n - p - n

transistor can be used as an amplifier in common emitter configuration. Also, explain how input and output voltages are out of phase by

180 °

for a common emitter transistor amplifier.

EASY

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

In a p-type semiconductor, the concentration of holes is

2 \times 10^{15} {cm}^{- 3} .

The intrinsic carrier concentration is

2 \times 10^{10} {cm}^{- 3} .

The concentration of electrons will be

HARD

Physics>Modern Physics>Electronic Devices>Intrinsic and Extrinsic Semiconductor

With reference to semi-conductors answer the following

:

(i)

What is the change in the resistance of the semi

‐

conductor with increase in temperature?

What is the effect of temperature on intrinsic semiconductor?

Important Questions on Electronic Devices

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