Match the following: i Ge doped with In 1 . n-type semiconductor ii Si doped with N 2 . Schottky defect iii ZnS 3 . p-type semiconductor iv CsCl 4 . Frenkel defect

i − 3 , ii − 1 , iii − 4 , iv − 2

i − 1 , ii − 3 , iii − 2 , iv − 4

i − 1 , ii − 3 , iii − 4 , iv − 2

i − 3 , ii − 1 , iii − 2 , iv − 4

Match List - I with List - II: List-I (Property) List-II (Example) (a) Diamagnetism (i) MnO (b) Ferrimagnetism (ii) O 2 (c) Paramagnetism (iii) NaCl (d) Antiferromagnetism (iv) Fe 3 O 4 Choose the most appropriate answer from the options given below:

( a ) - ( iii ) , ( b ) - ( iv ) , ( c ) - ( ii ) , ( d ) - ( i )

( a ) - ( iv ) , ( b ) - ( ii ) , ( c ) - ( i ) , ( d ) - ( iii )

( a ) - ( ii ) , ( b ) - ( i ) , ( c ) - ( iii ) , ( d ) - ( iv )

( a ) - ( i ) , ( b ) - ( iii ) , ( c ) - ( iv ) , ( d ) - ( ii )

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What we get if pure germanium is doped with arsenic?

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Important Questions on Solid State

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Chemistry>Physical Chemistry>Solid State>Electrical Properties

‘

X

’ melts at low temperature and is a bad conductor of electricity in both liquid and solid state.

X

is:

HARD

Chemistry>Physical Chemistry>Solid State>Electrical Properties

Match the following:

$i$	$Ge$ doped with $In$	$1 .$	n-type semiconductor
$ii$	$Si$ doped with $N$	$2 .$	Schottky defect
$iii$	$ZnS$	$3 .$	p-type semiconductor
$iv$	$CsCl$	$4 .$	Frenkel defect

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Chemistry>Physical Chemistry>Solid State>Electrical Properties

The one that is extensively used as a piezoelectric material is:

MEDIUM

Chemistry>Physical Chemistry>Solid State>Electrical Properties

The contribution to the total current in a semiconductor, due to electrons and holes are

0.75

and

0.25

respectively. The drift velocity of electrons is

\frac{3}{2}

times that of holes at this temperature. Then the ratio between electron concentration and hole concentration is

EASY

Chemistry>Physical Chemistry>Solid State>Electrical Properties

Silicon doped with Arsenic is

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Chemistry>Physical Chemistry>Solid State>Electrical Properties

The barrier potential of a p-n junction depends on:

(a)

type of semi-conductor material

(b)

amount of doping

(c)

temperature
Which one of the following is correct?

EASY

Chemistry>Physical Chemistry>Solid State>Electrical Properties

Which of the following arrangements shows the schematic alignment of magnetic moments of antiferromagnetic substance?

MEDIUM

Chemistry>Physical Chemistry>Solid State>Electrical Properties

The density of an electron-hole pair in pure germanium is

3 \times 10^{16} m^{- 3}

at room temperature. On doping with aluminium, the hole density increases to

4.5 \times 10^{22} m^{- 3}

. Now the electron density (in

m^{- 3}

) in doped germanium will be

MEDIUM

Chemistry>Physical Chemistry>Solid State>Electrical Properties

Which one of the following species responds to an external magnetic field?

EASY

Chemistry>Physical Chemistry>Solid State>Electrical Properties

A common observation seen in

{Fe}_{3} O_{4}

is that it is ferrimagnetic at room temperature but at

850 K

it becomes

EASY

Chemistry>Physical Chemistry>Solid State>Electrical Properties

An intrinsic semiconductor is converted into

n

-type extrinsic semiconductor by doping it with:-

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Chemistry>Physical Chemistry>Solid State>Electrical Properties

Silicon doped with gallium forms

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Chemistry>Physical Chemistry>Solid State>Electrical Properties

In the following circuit diagram, the current through the battery is

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Chemistry>Physical Chemistry>Solid State>Electrical Properties

In an unbiased p - n junction electrons diffuse from n-region to p-region because:

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Chemistry>Physical Chemistry>Solid State>Electrical Properties

A donor impurity results in

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Chemistry>Physical Chemistry>Solid State>Electrical Properties

Statement I: By doping silicon semiconductors with pentavalent material, the electrons density increases.

Statement II: The $n -$ type of semiconductor has a net negative charge.

In the above statements, choose the most appropriate answer from the options given below:

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Chemistry>Physical Chemistry>Solid State>Electrical Properties

The electron concentration in an undefined

n

-type semiconductor is the same as hole concentration in a undefined

p

-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.

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Chemistry>Physical Chemistry>Solid State>Electrical Properties

Match List - I with List - II:

List-I (Property)		List-II (Example)
(a)	Diamagnetism	(i)	$MnO$
(b)	Ferrimagnetism	(ii)	$O_{2}$
(c)	Paramagnetism	(iii)	$NaCl$
(d)	Antiferromagnetism	(iv)	${Fe}_{3} O_{4}$

Choose the most appropriate answer from the options given below:

MEDIUM

Chemistry>Physical Chemistry>Solid State>Electrical Properties

Which of the following oxides shows electrical properties like metals?

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Chemistry>Physical Chemistry>Solid State>Electrical Properties

Find the non-semiconductor element among the following.

What we get if pure germanium is doped with arsenic?

Important Questions on Solid State

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