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What will be the conductance of pure silicon crystal at $300 K$ temperature? If electron-hole pairs per ${cm}^{3}$ is $1.072 \times 10^{10}$ at this temperature, $μ_{n} = 1350 {cm}^{2} {(volt \sec)}^{- 1}$ and $μ_{p} = 480 {cm}^{2} {(volt \sec)}^{- 1}$

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Important Questions on Semiconductor Devices

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JEE Main/Advance

IMPORTANT

Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 23

Forbidden energy gap of

Ge

0.75 eV

, maximum wavelength of incident radiation for producing electron–hole pair in germanium semiconductor is,

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Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 24

Mobility of electrons in

n

-type

Ge

5000 {cm}^{2} v^{- 1} s^{- 1}

and conductivity is

5 mho {cm}^{- 1}

. If effect of holes is negligible, then impurity concentration will be

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Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 25

The intrinsic carrier density in germanium crystal at

300 K

2.5 \times 10^{13} per {cm}^{3}

. If the electron density in an

N -

type germanium crystal at

300 K

0.5 \times 10^{17} per {cm}^{3}

, the hole density (per

{cm}^{3}

) in this

N -

type crystal at

300 K

would be expected around-

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Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 26

Pure

Si

300 K

has equal electron

(n_{e})

and hole

(n_{h})

concentrations of

1.5 \times 10^{16} m^{- 3}

. Doping by indium increases

n_{h}

4.5 \times 10^{22} m^{- 3}

. Calculate

n_{e}

in the doped

Si

MEDIUM

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Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 27

The length of a germanium rod is

0.58 cm

and its area of cross-section is

1 {mm}^{2}

. If for germanium

n_{i} = 2.5 \times 10^{19} m^{- 3}, μ_{h} = 0.19 m^{2} {(V s)}^{- 1}, μ_{e} = 0.39 m^{2} {(V s)}^{- 1},

then the resistance of the rod will be -

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IMPORTANT

Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 28

The contributions in the total current flowing through a semiconductor due to electrons and holes are

\frac{3}{4} and \frac{1}{4}

. respectively. If the drift velocity of electrons is

\frac{5}{2}

times that of holes at this temperature, then the ratio of the concentrations of electrons and holes is

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Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 30

Diffusion current in a p–n junction is greater than the drift current in magnitude

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JEE Main/Advance

IMPORTANT

Alpha Question Bank for Engineering: Physics>Chapter 35 - Semiconductor Devices>Exercise - 1>Q 31

A hole diffuses from the p-side to the n-side in a p–n junction. This means that

What will be the conductance of pure silicon crystal at 300 K temperature? If electron-hole pairs per cm3 is 1.072 × 1010 at this temperature, μn=1350 cm2 volt sec-1 and μp= 480 cm2 volt sec-1

Important Questions on Semiconductor Devices

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What will be the conductance of pure silicon crystal at $300 K$ temperature? If electron-hole pairs per ${cm}^{3}$ is $1.072 \times 10^{10}$ at this temperature, $μ_{n} = 1350 {cm}^{2} {(volt \sec)}^{- 1}$ and $μ_{p} = 480 {cm}^{2} {(volt \sec)}^{- 1}$