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Earn 100

What will happen if we increase temperature in an intrinsic semiconductor ?

Important Questions on Electronic Devices

MEDIUM
The density of an electron-hole pair in pure germanium is 3×1016 m-3 at room temperature. On doping with aluminium, the hole density increases to 4.5×1022 m-3. Now the electron density (in m-3 ) in doped germanium will be
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Which of the following statements is incorrect?
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In a semiconductor crystal, if the current flows due to breakage of crystal bonds, then the semiconductor is called:
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In a semiconductor, the concentration of minority carriers depends mainly on
HARD
With reference to semi-conductors answer the following:
i What is the change in the resistance of the semiconductor with increase in temperature?
HARD
In a semiconductor, the number density of intrinsic charge carriers at 27°C is 1.5×1016 m-3. If the semiconductor is doped with an impurity atom, the hole density increases to 4.5×1022 m-3. The electron density in the doped semiconductor is _______×109 m-3.
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In a semiconductor, the conductivity increases with the increase in temperature due to
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An intrinsic semiconductor is converted into n-type extrinsic semiconductor by doping it with:-
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At a certain temperature, the number density of charge carriers in a semiconductor is n. When an electric field is applied to it, the charge carriers drift with an average speed v. If the temperature of the semiconductor is raised.
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An extrinsic semiconductor with electrons as majority carriers can be obtained by doping Ge or Si with
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For a p-type semiconductor, which of the following statements is true?
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The intrinsic carrier concentration of silicon sample at 300 K is 1.5×1016/m3. What is the density of minority carrier? (after doping, the number of majority carriers is 5×1020/m3
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For extrinsic semiconductors; when doping level is increased;
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As the temperature of the semiconductor is increased, the mobility of electrons and holes
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Statement I: By doping silicon semiconductors with pentavalent material, the electrons density increases.

Statement II: The n-type of semiconductor has a net negative charge.

In the above statements, choose the most appropriate answer from the options given below:

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The electron concentration in an undefined n-type semiconductor is the same as hole concentration in a undefined p-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.
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The conductivity of semiconductor increases with increase in temperature because
MEDIUM
The conductivity of a semiconductor sample having electron concentration of 5×1018 electrons m-3, hole concentration of 5×1019 holes m-3, electron mobility of 2.0 m2 V-1 s-1 and hole mobility of 0.01 m2 V-1 s-1 is

(Take charge of an electron as 1.6×10-19 C )