Match the following: i Ge doped with In 1 . n-type semiconductor ii Si doped with N 2 . Schottky defect iii ZnS 3 . p-type semiconductor iv CsCl 4 . Frenkel defect

i − 3 , ii − 1 , iii − 4 , iv − 2

i − 1 , ii − 3 , iii − 2 , iv − 4

i − 1 , ii − 3 , iii − 4 , iv − 2

i − 3 , ii − 1 , iii − 2 , iv − 4

HARD

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When silicon is doped with aluminium

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Important Questions on Solid State

EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

Statement I: By doping silicon semiconductors with pentavalent material, the electrons density increases.

Statement II: The $n -$ type of semiconductor has a net negative charge.

In the above statements, choose the most appropriate answer from the options given below:

MEDIUM

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

The density of an electron-hole pair in pure germanium is

3 \times 10^{16} m^{- 3}

at room temperature. On doping with aluminium, the hole density increases to

4.5 \times 10^{22} m^{- 3}

. Now the electron density (in

m^{- 3}

) in doped germanium will be

EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

The electron concentration in an undefined

n

-type semiconductor is the same as hole concentration in a undefined

p

-type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them.

EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

n -

type silicon, which of the following statements is true?

EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

An intrinsic semiconductor is converted into

n

-type extrinsic semiconductor by doping it with:-

EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

Which of the following does not give

p -

type properties to a semiconductor when used as a doping agent?

EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

Silicon doped with Arsenic is

EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

The majority charge carriers in P-type semiconductors are

EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

In the following circuit diagram, the current through the battery is

Question Image

EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

Silicon doped with gallium forms

HARD

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

Match the following:

$i$	$Ge$ doped with $In$	$1 .$	n-type semiconductor
$ii$	$Si$ doped with $N$	$2 .$	Schottky defect
$iii$	$ZnS$	$3 .$	p-type semiconductor
$iv$	$CsCl$	$4 .$	Frenkel defect

EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

The barrier potential of a p-n junction depends on:

(a)

type of semi-conductor material

(b)

amount of doping

(c)

temperature
Which one of the following is correct?

EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

In the following figure, identify the diodes which are reverse biased

(A)

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(B)

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(C)

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(D)

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EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

Which of the following statement is false?

MEDIUM

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

Identify a false statement from the following

EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

To get p-type semiconductor, impurity to be added to silicon should have which of the following numbers of valence electrons?

MEDIUM

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

A semiconductor has equal electron and hole concentration

6 \times 10^{8} m^{- 3}

. On doping with a certain impurity electron concentration increases to

9 \times 10^{12} m^{- 3}

. Calculate the new hole concentration. Also identify the new semiconductor.

EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

A donor impurity results in

MEDIUM

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

The contribution to the total current in a semiconductor, due to electrons and holes are

0.75

and

0.25

respectively. The drift velocity of electrons is

\frac{3}{2}

times that of holes at this temperature. Then the ratio between electron concentration and hole concentration is

EASY

Chemistry>Physical Chemistry>Solid State>Electrical and Magnetic Properties of Solids

In an unbiased p - n junction electrons diffuse from n-region to p-region because:

When silicon is doped with aluminium

Important Questions on Solid State

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