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Why construction of LED is similar to the normal p-n junction diode?

Important Questions on Semiconductor Devices

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In case of p-n junction diode, the width of depletion region is
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Identify the semiconductor devices whose characteristics are given below, in the order a, b, c, d:

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The barrier potential of a p-n junction depends on:
a type of semi-conductor material
b amount of doping
c temperature
Which one of the following is correct?
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What is the advantage of an LED bulb over filament bulb?

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The value of the resistor, RS, needed in the DC voltage regulator circuit shown here, equals:

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Take the breakdown voltage of the zener diode used in the given circuit as 6 V. For the input voltage shown in the figure below, the time variation of the output voltage is: (Graphs drawn are schematic and not to the scale)

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Figure shows a DC voltage regulator circuit, with a Zener diode of breakdown voltage =6 V . If the unregulated input voltage varies between 10 V to 16 V, then what is the maximum Zener current?
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A 220 V A.C. supply is connected between points A and B as shown in figure what will be the potential difference V across the capacitor?

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If in a p-n junction, a square input signal of 10 V is applied as shown, then the output across RL will be

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The increase in the width of the depletion region in a p-n junction diode is due to:
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Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of V0 changes by: (assume that the Ge diode has large breakdown voltage)

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In the given circuit, The current through battery is

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Two Zener diodes (A and B) having breakdown voltages of 6 V and  4 V respectively, are connected as shown in the circuit below. The output voltage V0 variation with input voltage linearly increasing with time, is given by (Vinput = 0 V at t = 0)

 

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In the following circuit diagram, the current through the battery is

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What will be the current flowing through the 6  resistor in the circuit shown, where the breakdown voltage of the Zener is 6 V?

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Two p - n photodiodes are fabricated from semiconductors with band gap of 2.8eV and 2.6eV, respectively.

Choose the correct statement from the following.

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The reading of the ammeter for a silicon diode in the given circuit is:

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In an unbiased p - n junction electrons diffuse from n-region to p-region because:
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Identify the electronic components from the following symbols. Write any one difference between them.

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