Semiconductor

The intrinsic carrier concentration in silicon at $T=300 \mathrm{K}$ is known to be $n_i=1.5\times {10}^{16}{ \mathrm{m}}^{-3}$. A sample of silicon is doped with $5\times {10}^{22}{ \mathrm{m}}^{-3}$ arsenic (a group $V$ element). Under these circumstances the concentrations of electrons $\left(n\right)$ and holes $\left(p\right)$ in the sample are

Intrinsic carrier concentration of a silicon sample at $300 \mathrm{K}$ is $1.5\times {10}^{16}{ \mathrm{m}}^{-3}.$ After doping, the number of majority carriers is $2.25\times {10}^{20}{ \mathrm{m}}^{-3}.$ The minority carrier density is

The base region of a silicon n-p-n transistor is obtained by doping $\mathrm{Si}$ with either

Which of the following energy band diagram shows the N-type semiconductor

In $n$-type semiconductor, Silicon is doped with

The charge carriers in an electrolyte are

In a pure semiconductor, electric current is due to_________.

In a p–type semiconductor, the concentration of holes is$2 \times {10}^{15} {\mathrm{cm}}^{-3}$  The intrinsic carrier concentration is$2 \times {10}^{10} {\mathrm{cm}}^{-3}$ . The concentration of electrons will be.

Which of the following energy band diagram shows the N-type semiconductor

The probability of electrons to be found in the conduction band of an intrinsic semiconductor at finite temperature is which of the following?

The energy gap between conduction band and valence band in $\mathrm{n}-\mathrm{type}$ semiconductor is

In the energy band diagram given in figure open circles and filled circles denote hole and electrons respectively. The material is

Electric current in extrinsic semiconductor in respect of mobility is expressed as

If ${\mathrm{n}}_{\mathrm{e}}$ and ${\mathrm{n}}_{\mathrm{h}}$ represent the number density of electrons and holes in extrinsic semiconductor respectively then for $\mathrm{p}-\mathrm{type}$ semiconductors.

When Pentavalent atoms are added to pure semiconductor then which type of extrinsic semiconductor is found

A piece of copper and the other germanium are cooked from room temperature at $80\mathrm{K}$, then which of the following would be a correct statement?

When the electrical conductivity of a semiconductor is due to the breaking of its covalent bonds, then the semiconductor is said to be

Which of the following is the best conductor of electricity?

In an n-type silicon, which of the following statement is true:

The mobility of conduction electrons is greater than that of holes, since electrons