Basics of Doping

A silicon specimen is made into a $p$-type semiconductor by doping, on an average, one indium atom per ${5\times 10}^7$ silicon atoms. If the number density of atoms in the silicon specimen is ${5\times 10}^{28}$ atoms ${\mathrm{m}}^{-3}$, then the number of acceptor atoms in silicon per cubic centimeter will be

Doping a semiconductor results in

Which of the following is an extrinsic semiconductor?

If $N_{\mathrm{p}}$ and $N_{\mathrm{e}}$ be the numbers of holes and conduction electrons in an extrinsic semiconductor, then :-

The number of silicon atoms per ${\mathrm{m}}^3$ is $5\times {10}^{33}$. This is doped simultaneously with $5\times {10}^{22}$ atoms per ${\mathrm{m}}^3$ of Arsenic and $5\times {10}^{20}$ per ${\mathrm{m}}^3$ atoms of indium. Calculate the number of electrons and holes. Given that $n=1.5\times {10}^{16} {\mathrm{m}}^{-3}$. Is the material n-type or p-type?

Which group elements can be used to dope with $\mathrm{Si}/\mathrm{Ge}$ to get a $\mathrm{P}-\mathrm{type}$ semiconductor.

Would there be any advantage in adding $\mathrm{n}$-type or $\mathrm{p}$-type impurities to copper

Assertion: In n-type semiconductor electrons in conduction band is more than holes in valance band.

Reason: Only electrons are produced when pentavalent impurity is added to pure semiconductor.