Energy Bands in Solids

What is Fermi Level and Fermi Energy Level.

Fermi level in the case of intrinsic semiconductor lies

In a semiconductor, the forbidden energy gap between the valence band and the conduction band is of the order is;

In an insulator, the energy gap between conduction band and valence band is about;

In a metal, the separation between conduction band and valence band is of the order;

If the lattice constant of this semiconductor is decreased, then which of the following is correct?

Value of forbidden energy gap for semiconductor is:

The energy band gap of gallium arsenide phosphate is $1.98 e\mathrm{V}$. Calculate the wavelength of electromagnetic radiation emitted (in Angstrom), when electrons and holes combine in this alloy semiconductor directly. (Take Planck's constant $\left(h\right)=6.62\times {10}^{-34 }\mathrm{J} \mathrm{s}$)

If the energy of a photon of sodium light $(\mathrm{\lambda }=589 \mathrm{n}\mathrm{m})$ is equal to the bandgap of a semiconductor, calculate the minimum energy required to create hole-electron pair. Take, $h=6.6\times {10}^{-34} \mathrm{J} \mathrm{s}, c=3\times {10}^8 \mathrm{m} {\mathrm{s}}^{-1}$.

The forbidden energy gap between the conduction band and the valence band is not present in

The probability of electrons to be found in the conduction band of an intrinsic semi-conductor at a finite temperature

In a conductor, the energy gap between conduction bands and valence bands is

In a photodiode, the conductivity increases when the material is exposed to light. It is found that conductivity changes only if the wavelength is less than $600 \mathrm{n}\mathrm{m}.$ What is the bandgap?

A p-n photodiode is fabricated from a semiconductor with band gap of $2.8 \mathrm{eV}$. Can it detect a wavelength of $6000 \mathrm{nm}$?

The forbidden energy gap in Germanium is $0.7\mathrm{eV}$ .The wavelength at which its absorption starts by Germanium is :

The forbidden energy gap in Germanium is $0.7\mathrm{eV}$. The wavelength at which its absorption starts by Germanium is :

At room temeprature which one of the following statements is most appropriate about carbon, silicon and germanium having four valence electrons each.

Carbon, silicon and germanium have four valence electrons each. These are characterized by valence and conduction bands separated by energy band gap respectively equal to ${\left(E_g\right)}_C,{\left(E_g\right)}_{Si}$ and ${\left(E_g\right)}_{Ge}.$ Which of the following statements is true?

In a semiconductor, separation between conduction and valence bands is of the order of

An electron hole pair is formed when light of maximum wavelength $6000 Å$ is incident on the semiconductor. What is the band gap energy of the semiconductor? $\left(h=6.62\times {10}^{-34}Js\right)$