Intrinsic Semiconductors

Fermi energy level for intrinsic semiconductors lies.

In a pure semiconductor, electric current is due to_________.

In a p–type semiconductor, the concentration of holes is$2 \times {10}^{15} {\mathrm{cm}}^{-3}$  The intrinsic carrier concentration is$2 \times {10}^{10} {\mathrm{cm}}^{-3}$ . The concentration of electrons will be.

The probability of electrons to be found in the conduction band of an intrinsic semiconductor at finite temperature is which of the following?

A piece of copper and the other germanium are cooked from room temperature at $80\mathrm{K}$, then which of the following would be a correct statement?

When the electrical conductivity of a semiconductor is due to the breaking of its covalent bonds, then the semiconductor is said to be

At absolute zero temperature, intrinsic Germanium and intrinsic Silicon are

At absolute zero temperature intrinsic Germanium and intrinsic Silicon, are

If $n_e and n_h$ are respective electron and hole concentrations in an extrinsic semiconductor and $n_i$ is electron concentration in an intrinsic semiconductor, then

A pure $\mathrm{Ge}$ specimen is doped with $\mathrm{Al}$. The number density of acceptor atoms is approximately ${10}^{21} {\mathrm{m}}^{-3}$ . If density of electron hole pair in an intrinsic semi - conductor is approximately ${10}^{19} {\mathrm{m}}^{-3}$ , the number density of electrons in the specimen is

Assertion: Both n-type and p-type are intrinsic semiconductors.

Reason: In n-type, charge carriers are free electrons while in p-type they are holes.

In a semiconductor, 

Holes are charge carriers in
(1) Intrinsic semiconductors 

(2) Ionic solids

(3) P-type semiconductors   

(4) Metals

Correct options are

A particular semiconductor in equilibrium has 10¹⁶/cm3 donor atoms, 1.1 x 10¹⁷cm³ acceptor atoms. If the intrinsic carrier density (n_i) of the semiconductor is 10¹²/cm³​, then the electron density in it will be

A strip of copper and another germanium are cooled from room temperature to 80 K. The resistance of

The electrical conductivity of a semiconductor increases when electromagnetic radiation of a wavelength shorter than $2480 \mathrm{nm}$ is incident on it. The band gap in $\left(\text{eV}\right)$  for the semiconductor is

At absolute zero, Si acts as