P-N Junction Diode

Which of the following circuit diagram of p – n junction diode is (i) forward bias and in (ii) reverse bias:
    

Which of the following statements is NOT TRUE for a semiconductor or a semiconductor device?

An ideal diode $D$ and a resistance $R$ are connected in series with an alternating voltage source $V\left(t\right)=V_0\sin \omega t$. If the root-mean-square value of the voltage $\left(V_x\right)$ is measured at the point $X$, as shown, the result will be

In a forward biased p-n junction

The breakdown that occurs in reverse bias conditions in a narrow junction diode is known as

Reverse saturation current of a diode:

Pick out the incorrect statement regarding reverse saturation current in the p-n junction diode.

The electric field in the depletion layer of an unbiased p-n junction is;

When the p-n junction diode is reverse biased, the thickness of the depletion layer;

When a p-n junction diode is reverse biased;

In a p-n junction diode;

The main cause of zener breakdown is

Reverse bias applied to a $p-n$ junction diode.

Beyond the threshold voltage, resistance offered by the diode is:

Two identical PN junction are joined in series with a battery shown below. For which potential drop is same.

The circuit shown below contains two ideal diodes, each with a forward resistance of $50 \mathrm{\Omega }.$ If the battery voltage is $6 \mathrm{V},$ the current through the $100 \mathrm{\Omega }$ resistance (in amperes) is:

 

In reverse bias of a p-n junction diode, the reverse current is very small and is voltage independent upto certain reverse bias voltage, known as

In figure, ${\mathrm{V}}_0$ is the potential barrier across a $\mathrm{p}-\mathrm{n}$ junction, when no battery is connected across the junction.

In the given circuit, Current through the battery is :-

The mobility of free electron is greater than holes because :-