p-n Junction Diode

Which of the following circuit diagram of p – n junction diode is (i) forward bias and in (ii) reverse bias:
    

The breakdown mechanism in a lightly doped P-N junction under reverse biased condition is called _____ breakdown.

Low doping required for Avalanche breakdown in diodes. 

The breakdown that occurs in reverse bias conditions in a narrow junction diode is known as

Reverse saturation current of a diode:

Pick out the incorrect statement regarding reverse saturation current in the p-n junction diode.

The electric field in the depletion layer of an unbiased p-n junction is;

When the p-n junction diode is reverse biased, the thickness of the depletion layer;

When a p-n junction diode is reverse biased;

In a p-n junction diode;

The main cause of zener breakdown is

Reverse bias applied to a $p-n$ junction diode.

For a p-n junction normal diode and a Zener diode, which of the following statements is true?

The reading of the ammeter for a silicon diode in the given circuit is:

Currents flowing in each of the following circuits $\mathrm{A}$ and $\mathrm{B}$ respectively are

Identify the semiconductor devices whose characteristics are given below, in the order $\left(\mathrm{a}\right),\mathrm{ }\left(\mathrm{b}\right),\mathrm{ }\left(\mathrm{c}\right),\mathrm{ }\left(\mathrm{d}\right)$:

The forward-biased diode connection among the following is:

Find $V_{AB}$ for the circuit given below.

Two identical PN junction are joined in series with a battery shown below. For which potential drop is same.

The circuit shown below contains two ideal diodes, each with a forward resistance of $50 \mathrm{\Omega }.$ If the battery voltage is $6 \mathrm{V},$ the current through the $100 \mathrm{\Omega }$ resistance (in amperes) is: