p-n Junction and Semiconductor Diode
p-n Junction and Semiconductor Diode: Overview
This topic covers concepts, such as, p-n Junction, Potential Barrier at the Junction Diode, Threshold Voltage & Reverse Saturation Current etc.
Important Questions on p-n Junction and Semiconductor Diode
Which of the following circuit diagram of p – n junction diode is (i) forward bias and in (ii) reverse bias:

The reverse current in a Zener diode starts increasing suddenly at a relatively low breakdown voltage of or so. Is this statement true or false?

A light emitting diode (LED) has a voltage drop of across it and passes a current of . When it operates with battery through a limiting resistor , the value of is

In the semiconductor only the majority charge carriers will be present.

Define majority charge carriers.

Why does breakdown occur in reverse bias?

Reverse bias applied to a junction diode.

The majority current carriers in n-type semiconductor is

Differentiate between the term breakdown voltage and Threshold voltage.

Beyond the threshold voltage, resistance offered by the diode is:

When a junction diode is reverse biased, the current called drift current is due to:

The drift current in a p−n junction diode is a motion of charge carriers due to the electric field and opposite in direction to the diffusion current

What is the current through an ideal -Junction diode shown in the figure below:-

Two identical PN junction are joined in series with a battery shown below. For which potential drop is same.

The circuit shown below contains two ideal diodes, each with a forward resistance of If the battery voltage is the current through the resistance (in amperes) is:

In figure, is the potential barrier across a junction, when no battery is connected across the junction.

In the given circuit, Current through the battery is :-

The forward-bias voltage of a diode is changed from to the current changes from to What is the value of the forward bias resistance?

In the circuit given below, the value of the current is

A forward biased diode is treated as
