Intrinsic Semiconductors

What is the effect of temperature on an intrinsic semiconductor?

Draw the energy band diagram when intrinsic semiconductor $\left(\mathrm{Ge}\right)$ is doped with impurity atoms of Antimony $\left(\mathrm{Sb}\right)$. Name the extrinsic semiconductor so obtained and majority charge carriers in it.

In a pure semiconductor, electric current is due to_________.

In a p–type semiconductor, the concentration of holes is$2 \times {10}^{15} {\mathrm{cm}}^{-3}$  The intrinsic carrier concentration is$2 \times {10}^{10} {\mathrm{cm}}^{-3}$ . The concentration of electrons will be.

Assertion : An n-type semiconductor has a large number of electrons but still it is electrically neutral.

 Reason : An n-type semiconductor is obtained by doping an intrinsic semiconductor with a pentavalent impurity. 

How current is conducted in intrinsic semiconductor?

In an intrinsic semiconductor, the number of free electrons equals the number of holes.

The probability of electrons to be found in the conduction band of an intrinsic semiconductor at finite temperature is which of the following?

The mobility of free electrons is greater than that of free holes because

Define electron motion in a semiconductor.

Explain the electric current due to electrons in an intrinsic semiconductor.

At absolute zero temperature, intrinsic Germanium and intrinsic Silicon are

Calculate the electric current generated in an intrinsic germanium plate at room temperature whose area is $2\times {10}^{-4} {\mathrm{m}}^2$ and width is $1.2\times {10}^{-3} \mathrm{m}$ and a potential difference of $5 \mathrm{V}$ is applied across its faces. Intrinsic charge carrier density is $1.6\times {10}^6/$${\mathrm{m}}^3$ for germanium at room temperature. The mobility of electrons and holes is $0.4 {\mathrm{m}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ and $0.2 {\mathrm{m}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$.

At absolute zero temperature intrinsic Germanium and intrinsic Silicon, are

Calculate the electric current generated in an intrinsic germanium plate at room temperature whose area is $2\times {10}^{-4} {\mathrm{m}}^2$ and width is $1.2\times {10}^{-3} \mathrm{m}$ and a potential difference of $5 \mathrm{V}$ is applied across its faces. Intrinsic charge carrier density is $1.6\times {10}^6/$${\mathrm{m}}^3$ for germanium at room temperature. The mobility of electrons and holes is $0.4 {\mathrm{m}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ and $0.2 {\mathrm{m}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$.

Holes are charge carriers in
(1) Intrinsic semiconductors 

(2) Ionic solids

(3) P-type semiconductors   

(4) Metals

Correct options are

A p-n junction has acceptor impurity concentration of ${10}^{17} {\mathrm{c}\mathrm{m}}^{-3}$ in the $P$ side and donor impurity concentration of ${10}^{16}$ ${\mathrm{c}\mathrm{m}}^{-3}$ in the $N$ side. What is the contact potential at the junction? ($kT=$ thermal energy, intrinsic carrier concentration $n_{\mathrm{i}}=1.6\times {10}^{10} {\mathrm{cm}}^{-3}$ )

A silicon specimen is made into a $p$-type semiconductor by doping, on an average, one indium atom per ${5\times 10}^7$ silicon atoms. If the number density of atoms in the silicon specimen is ${5\times 10}^{28}$ atoms ${\mathrm{m}}^{-3}$, then the number of acceptor atoms in silicon per cubic centimeter will be

If the ratio of the concentration of electrons that of holes in a semiconductor is 7/5 and the ratio of currents is 7/4 then what is the ratio of their drift velocities?