P-N Junction Diode

Which of the following circuit diagram of p – n junction diode is (i) forward bias and in (ii) reverse bias:
    

In diode, increasing the forward voltage, the thickness of depletion layer ____

The breakdown mechanism in a lightly doped P-N junction under reverse biased condition is called _____ breakdown.

Low doping required for Avalanche breakdown in diodes. 

The breakdown that occurs in reverse bias conditions in a narrow junction diode is known as

Pick out the incorrect statement regarding reverse saturation current in the p-n junction diode.

 The reverse saturation current in a p-n junction diode is due to only the;

Is reverse saturation current dependent upon the change in temperature ? Explain.​

What is reverse saturation current in diode ? Why it is temperature dependent ?

When the p-n junction diode is reverse biased, the thickness of the depletion layer;

In a p-n junction diode;

The reading of the ammeter for a silicon diode in the given circuit is:

Currents flowing in each of the following circuits $\mathrm{A}$ and $\mathrm{B}$ respectively are

Identify the semiconductor devices whose characteristics are given below, in the order $\left(\mathrm{a}\right),\mathrm{ }\left(\mathrm{b}\right),\mathrm{ }\left(\mathrm{c}\right),\mathrm{ }\left(\mathrm{d}\right)$:

The forward-biased diode connection among the following is:

In case of p-n junction diode, the width of depletion region is

Find $V_{AB}$ for the circuit given below.

What is the current through an ideal $PN$-Junction diode shown in the figure below:-

Two identical PN junction are joined in series with a battery shown below. For which potential drop is same.

Two identical $p-n$ junctions may be connected in series with a battery in three ways. The potential difference across the two $p-n$ junctions are equal in